Profiling Approaches Beyond FIB

This presentation explores advanced profiling methods in semiconductor etching, emphasizing precision metrics essential for DRAM and 3D NAND applications. It reviews current techniques like TEM and FIB, identifying limitations and introducing Broad Ion Beam (BIB) as a cost-efficient alternative optimized for routine analysis. Key metrics such as CD, LCDU, and Z-profile are examined for actionable insights, supported by visual representations. Finally, a comparative evaluation of profiling...